IRF7207 : -20V Single P-channel HexFET Power MOSFET in a SO-8 Package. This package is LIMITING VALUES In accordance with the Absolute. Cavity free cylindrical glass SOD81 package through ImplotecTM(1) technology. hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Glass passivated High maximum operating temperature Low leakage current Excellent stability Available in ammo-pack. Transistors are delivered in matched.īYD123 : BYD123 Ultra Fast Low-loss Rectifier. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. The transistor presents excellent performance as a linear amplifier in the h.f. N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. TCO-SPLICE : NTE Replacement Parts SPLICE FOR TCO Specifications: Manufacturer: NTE RoHS: NoĢN6314 : Screening Options Available = Polarity = PNP Package = TO66 (TO213AA) Vceo = 80V IC(cont) = 5A HFE(min) = 25 HFE(max) = 100 Vce/ic = 4V / 1.5A FT = 4MHz PD = 75W.īLW76 : Power. of Teeth: - Knob Diameter: - Flange Diameter: - Shaft Type: - Knob Material: - Torque: - Bore Size: - Module Number:. NEV1500M80 : Aluminum Electrolytic 6.3V to 100VĠ4-17500 : CABLE TIE 17IN UV BLACK Specifications: Knob / Dial Style: - Gear Material: - Shaft Diameter: - No. NEV0.56M100 : Aluminum Electrolytic 6.3V to 100V SIT10000M250 : 105 Snap-in Aluminum Electrolytic NTE2084 : Integrated Circuit 5−stage Darlington Transistor Array NTE990 : NTE990, Integrated Circuit Dual Audio Power Amplifier NTE6088 : Silicon Dual Schottky Rectifier. Max Repetitive Peak Reverse Voltage VRRM = 1200V. Single Phase, Hybid Bridge, Common Cathode, Freewheeling Diode. NTE5250AK : 50 Watt Zener Diode, +-5% Tolerance. NTE5247A : 50 Watt Zener Diode, +-5% Tolerance. NTE1472 : NTE1472, Integrated Circuit Audio Power Amplifier, 1W NTE2363 Silicon Complementary Transistors High Current General Purpose Amp/switch NTE2363 Silicon Complementary NPN Transistor. NTE2361 Silicon Complementary Transistors High Speed Switch NTE2361 Silicon Complementary NPN Transistor. NTE2360 Silicon Complementary Transistors Digital W/2 Built-in 47k Bias Resistors NTE236 NTE236, Silicon NPN Transistor Final RF Power Output NTE2359 Silicon Complementary Transistors Digital W/2 Built-in 47k Bias Resistors NTE2359 Silicon Complementary NPN Transistor. NTE2357 Silicon Complementary Transistors Digital W/2 Built-in 22k Bias Resistors NTE2357 Silicon Complementary NPN Transistor. NTE2355 Silicon Complementary Transistors Digital W/2 Built-in 10k Bias Resistors NTE2355 Silicon Complementary NPN Transistor. High Voltage Horizontal Output For High Definition Crt. TV Horizontal Deflection Output W/damper Diode. NTE2351 Silicon Complementary Transistors Darlington Power Amp, Switch NTE2351 Silicon Complementary NPN Transistor. NTE2350 Silicon Darlington Transistors High Current, General Purpose Some Part number from the same manufacture NTE Electronics, Inc. Parameter Symbol Test Conditions Min Typ Max Unit V MHz pF ♚ CollectorBase Breakdown Voltage V(BR)CBO = 0 CollectorEmitter Breakdown Voltage V(BR)CER = 1mA, RBE = 150 EmitterBase Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CollectorEmitter Saturation Voltage BaseEmitter Saturation Voltage Current GainBandwidth Product Output Capacitance Power Output Collector Efficiency V(BR)EBO = 0 ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob PO VCB = 0 VEB = 0 VCE = 100mA VCE = 100mA VCB = 1MHz VCC = 12V, Pin = 27MHz to +150☌ Electrical Characteristics: (TC =+25☌ unless otherwise specified) Absolute Maximum Ratings: (TA = +25☌ unless otherwise specified) CollectorEmitter Voltage (RBE = 150), VCER. Description: The is an NPN silicon transistor a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.
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